History

HISTORY OF THREEWAY

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2023

  • Completion of IGBT development for 1200Volt grade.

  • Expansion and relocation of headquarters to Cheongna, Incheon.

2022

  • Approval of all models of IGBT for 650Volt and 1400Volt grades in Cuckoo Electronics induction ranges.

  • Recognition as a $10 million export champion by the Ministry of Trade, Industry, and Energy.

  • Bitmain, the world's largest mining equipment company, has been approved and is the first vendor for supply.

  • ASUS ATX Power has received approval for supply.

2021

  • Completion of IGBT development for 650Volt and 1400Volt grades.

  • Commendation from the Minister of SMEs and Startups.

2020

  • Commencement of Field Stop IGBT development for 650Volt and 1400Volt grades in SF.

2019

  • More than Super Junction(“SJ”) MOSFET 600-900V, 110 products are developed at the Samsung Foundry(“SF”) 8inch Fab.

  • Under porting SemiHow Shielded Gate Trench(“SGT”) MOSFET Process and Normal Low Voltage Trench(“LVT”) MOSFET Process to SF 8inch Fab.

2018

  • Sign a contract with the SF Division to port SemiHow Process technology to SF 8inch Fab and to produce SemiHow SJ MOSFET, SGT MOSFET, Planar MOSFET, FS IGBT products at SF.

  • Completed porting SemiHow SJ MOSFET Process(Epi Stack Technology) and Planar MOSFET 800,900V to SF 8inch Fab.

  • SJ MOSFET Product developed at SF 8inch Fab was approved by and delivered for Samsung Mobile Division.

2016

  • Exceeding $ 5M of sales figures for mobile charger of SAMSUNG with Super Junction MOSFET

2015, 16

  • Supply about 110 million 700V SJ MOSFETs for Samsung Galaxy series charger.

2014

  • Develop 700v SJ MOSFET with Deep Trench Technology and Approved for Samsung Galaxy S5, Note4 charger.

2012

  • Approved HV MOSFET Products for Samsung Galaxy series charger and Triac products for Washing machine application

  • Develop Thyristor (Triac, SCR)

2010,11

  • Develop Power Switch MCP(PWM IC+MOSFET) and PFC IC at DB Hitech 8inch Fab.

  • Develop Soc(PWM IC+MOSFET) at Dalsa(in Canada)’s BCDMOS 8inch Process

2008, 09, 10

  • Develop Gen2, Gen3, Gen4 Planar MOSFETs at Guoyu, ZhongHuan and FMIC 6inch Fab. (Transplant of SemiHow’ Process/Production technologies)

2007

  • Registered as a Power Discrete supplier to Samsung Electronics and China/Korea Big Customers.

  • Achieve sales of USD $ 15 million.

2004

  • Develop High Voltage(500-900V) Planar MOSFETs at China Resources Microelectronics Limited 5inch Fab. (Transplant of SemiHow’ Process/Production technologies)

2003

  • Developed Power BJT(Bipolar Junction Transistor) 700Volt 13005,7,9 for PC Power Application at Huashan Electronics 4inch Fab. (Transplant of SemiHow’ Process/Production technologies)

2002

  • SemiHow established

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